page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures ? high collector to base voltage. ? excellent dc current gain linearity. ? complements to pnp type 2sb804. maximum ratings ( t a =25 unless otherwise noted) par a met e r symbol v a lue uni t collector - base v ol t age v cbo 1 00 v collector - emitter v ol t age v ceo 80 v emitter - base v ol t age v ebo 5 v collector cur r ent - continuous i c 1 a collector power dissi p ation p c 0 .75 w s torage t emp e r a ture t stg - 55to +150 electrical characteristics ( @ ta=25 unless otherw ise specified ) parameter s y mbol test conditions m in t yp m ax u nit collector cut - off current i cbo v c b =100 v , i e =0 0.1 ua emitter cut - off current i ebo v eb =5 v ,i c =0 0.1 ua collector - e m itter saturation voltage v ce( s a t ) i c / i b =500ma/50ma 0.15 0.5 v base - emitter saturation voltage v be(sat) i c / i b =500ma/50ma 0.9 1.5 v base - emitter voltage v be v c e =10 v ,i c =10ma 0.6 0.63 0.7 v dc current g ain(not e ) h fe v c e =2 v , i c =1ma 90 200 400 cur r ent gain ban d width p r oduct f t v c e =5 v ,i e =10ma 160 mhz output cap a citance c ob v c b =10 v , f=1mhz ,i e =0a 12 pf classification of h fe range 2 3 0 - 380 3 40 - 600 5 60 - 800 marking bw bv bu 2SD1005 ( npn ) 1. base 2. collecto sot - 89 3. emitter
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. 2SD1005 typical characteristics
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